Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
We talking about smoke detectors here or radioactivity detector ? I supose smoke detectors.
MOSFET op-amps usually contain protection diodes which can be responsible for several picoamperes of leakage at room temperature and a fairly steep increase in leakage as the temperature increases but in some ion chamber applications this extra leakage is tolerable. Non-protected MOSFET front-ends are easily damaged by static electricity and special low-leakage protection diodes are usually added. Low current JFETs like the 2N4220 give respectable performance and the types intended for electrometer applications like the 2N4117A are quite impressive, exhibiting leakage well below 1 pA. They have the added benefit of being significantly less sensitive to static electricity than unprotected MOSFETs. Full ESD precautions must be observed with any of these approaches!
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
