Thank you Dominik,
I use 180nm process and WPE is not a problem.
As u can see I have ratio 10:1 between TN1 and TN0 but 8:1 between TN2 and TN3.
When I was doing spectre simulations I had 10:1 current mirroring for 8:1 MOSFET ration, Vth(TN2)=335mV and Vth(TN3)=346mV.
Also I have 80 fingers for TN1, 8 fingers for each of TN0 and TN2 and when extracted every finger have 335mV like in schematic even the main one (TN3) who had 346mV.
I am confused. What do you think?