Could anybody offer me some material or paper on CMOS reliability issue such as NCS ( non conducting stress ) HCS ( hot carrier stress) ? I won't plan to have deep understanding but it is better to show me some picture.
Thanks
Many of the major semiconductor vendors have documents on their web sites describing wearout mechanisms. The major wearout mechanisms in CMOS are:
Electromigraion -- metal layers voiding by current flow
Stress migration -- metal layers voiding because of mechanical stress
Hot Carrier -- NMOS, NPN degradation caused by high energy carriers
NBTI -- (Negative Bias Temperature Instability) PMOS devices
TDDB -- Time Dependent Dielectric Breakdown (gate oxide, capactior oxide)
I did a Goggle Search for "semiconductor failure mechanisms" and got about 106K hits. Looking through these I see several from major manufactures:
I would suggest you look around the web and see what is available for free and then you could also search Amazon or BarnsandNoble for books that are available on Semiconductor Failure Mechanisms.
A starting point may be the JEDEC JESD28-A document. It lists the testing methodology for hot carrier testing, parameter degradation and lifetime extrapolation. For normal CMOS devices it is a good starting point. I am not sure if this document cover both NMOS/PMOS devices. There is slight differences in the methodology. Also, high voltage devices may not behave as shown ideally as in the standard.