cupoftea
Advanced Member level 6

Hi,
Just found the LMG2652 GaN Half Bridge Chip with 650V GaN FETs on it.
LMG2652
Was thinking here is the answer to the LLC and PSFB problems of reverse recovery.
Also, it would never suffer from spurious turn on of the bridge leg FET when the "other" FET is turned ON.......then i get to page 17 and it says....
QUOTE >>> The LMG2652 GaN power FETs are intended to be turned on in either zero-voltage switching (ZVS) or discontinuous-conduction mode (DCM) switching conditions <<<UNQUOTE
So why can it not handle turn-ON into eg CCM hard switched half bridge waveforms?
And why only stipulate about "turn-ON"?....in for example a PSFB, or LLC with low Lmag and operated way off the resonant frequency, the turn_off transient can be very hard switching....so why does it not mention that aswell?
Just found the LMG2652 GaN Half Bridge Chip with 650V GaN FETs on it.
LMG2652
Was thinking here is the answer to the LLC and PSFB problems of reverse recovery.
Also, it would never suffer from spurious turn on of the bridge leg FET when the "other" FET is turned ON.......then i get to page 17 and it says....
QUOTE >>> The LMG2652 GaN power FETs are intended to be turned on in either zero-voltage switching (ZVS) or discontinuous-conduction mode (DCM) switching conditions <<<UNQUOTE
So why can it not handle turn-ON into eg CCM hard switched half bridge waveforms?
And why only stipulate about "turn-ON"?....in for example a PSFB, or LLC with low Lmag and operated way off the resonant frequency, the turn_off transient can be very hard switching....so why does it not mention that aswell?