sab123456
Newbie level 5
Ionosphere Intrinsic Impedance simulation with n-type Semiconductor
Quote form "Field and wave electromagnetics" D.K.Cheng chapter 8-3.3:
"The electron and ion densities in the individual ionized layers are essentially equal.
Ionized gases with equal electrons and ion densities are called plasmas.
The Ionosphere plays an important role in the propagation of electromagnetic waves and affects telecommunication. Because the electrons are much lighter than the positive ions, they are accelerated more by electric fields of electromagnetic waves passing through the Ionosphere. In our analysis we shall ignore the motion of the ions and regard the ionosphere as a free electron gas…"
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Ionosphere Intrinsic Impedance (ηp) =ηo/√ (1-(fp/f) ²)
ηo =120*π
Fp~=9*√ (N) (Hz)
N=electrons per unit volume.
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Is it possible to apply the above formulas to n-type semiconductor and make ideal intrinsic impedance by controlling the mass of electrons per unit volume?
Please help me whith your ideas.
Quote form "Field and wave electromagnetics" D.K.Cheng chapter 8-3.3:
"The electron and ion densities in the individual ionized layers are essentially equal.
Ionized gases with equal electrons and ion densities are called plasmas.
The Ionosphere plays an important role in the propagation of electromagnetic waves and affects telecommunication. Because the electrons are much lighter than the positive ions, they are accelerated more by electric fields of electromagnetic waves passing through the Ionosphere. In our analysis we shall ignore the motion of the ions and regard the ionosphere as a free electron gas…"
--------------------
Ionosphere Intrinsic Impedance (ηp) =ηo/√ (1-(fp/f) ²)
ηo =120*π
Fp~=9*√ (N) (Hz)
N=electrons per unit volume.
--------------------
Is it possible to apply the above formulas to n-type semiconductor and make ideal intrinsic impedance by controlling the mass of electrons per unit volume?
Please help me whith your ideas.
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