The total switching energy is dependent on average current switched off (& on), supply rail, and temperature, quality of anti=parallel diodes, and any snubbing present - so the max values on the data sheet may lead you to compute too high a value - hence the graphs.
As to the 2160 SiC mosfet - it it only a 165W device, with 0.7 - 0.9 degC/W junc to case thermals, this tells you the die is very small compared to a similar mosfet (>500W), or IGBT, as such it has virtually no short circuit capability (much like a mosfet) and turning off a large current quickly will cause voltage overshoot on the drain-source due to the di/dt in the wiring inductance, IGBT's are inherently current limiting for a fixed gate voltage - mosfets do not have this and hence are not used in inverters much above 1kW.
If you have a 50A peak o/p on an inverter, you would typically use 100A devices (igbt) for a safety margin.