I have a problem with TCAD (mosfet, phosphorus diffusion)

[Max_spb]

Easy TCAD question

Hi all,
I am writting my diploma about TCADs and have a problem in a practical part.
I must simulate mosfet. And I have a process list of the real one.

I use Sentaurus Process.
And I don't know how to realize phosphorus diffusion to silicon(to generate source and drain regions) with 5e19 concentration, 900C temperature and 10 min.

Silvaco uses:
diffus time=10 temp=900 c.phos=5e19
and that's all,so easy...
But on sprocess 'diffuse' command haven't got any params for arbitrary material(phosphorus), only O2,H2O,N2 and some another.
gas_flow works with they only too.

I know, that it is trivial question, but I am novice.
Please,help!

P.s. Sorry for my English I am from Russia

 

[ppboyindream]

Using Implant material, it is not diffuse

 

[Colbhaidh]

Re: I have a problem with TCAD (mosfet, phosphorus diffusion

For sentaurus, only the syntax is different: start with implant, then anneal in furnace.
For example

Comment('NSD Implant, Phos 60keV 1E14')
Implantation(Element=P, Dose=1.0e14, Energy=60, Tilt=0degree, Rotation=-90degree)

Comment('10 min 900C anneal in Mitrogen')
Diffusion(Time=10.0, Temperature=900, Atmosphere=Mixture Flow( N2=6) Pressure=1)

 

[vctr.pal]

Hi all,
I am facing a problem regarding linking up the different tools in TCAD.sentaruas structure editor and sentaraus devices runs properly but showing a error that no input file found for inspect.