some books say , that the mos models in hspice doesnot model the non quasi static effect in mosfet , and the mosfet model BSIM3v3 and BSIM4 model this effect
how the hspice donot model the effect , and is that ture which hspice version support the model of non quasi static
Here are the models supported by HSPICE 2003-3 (according to the doc) :
• LEVEL 1 IDS: Schichman-Hodges Model
• LEVEL 2 IDS: Grove-Frohman Model
• LEVEL 3 IDS: Empirical Model
• LEVEL 4 IDS: MOS Model
• LEVEL 5 IDS Model
• LEVEL 6/LEVEL 7 IDS: MOSFET Model
• LEVEL 7 IDS Model
• LEVEL 8 IDS Model
• LEVEL 27 SOSFET Model
• LEVEL 38 IDS: Cypress Depletion Model
• LEVEL 40 HP a-Si TFT Model
• LEVEL 13 BSIM Model
• LEVEL 28 Modified BSIM Model
• LEVEL 39 BSIM2 Model
• Level 47 BSIM3 Version 2 MOS Model
• Level 49 and 53 BSIM3v3 MOS Models
• Level 54 BSIM4 Model
• Level 57 UC Berkeley BSIM3-SOI Model
• Level 59 UC Berkeley BSIM3-SOI FD Model
• Level 60 UC Berkeley BSIM3-SOI DD Model
• Level 50 Philips MOS9 Model
• Level 55 EPFL-EKV MOSFET Model
• Level 58 University of Florida SOI
• Level 61 RPI a-Si TFT Model
• Level 62 RPI Poli-Si TFT Model
• Level 63 Philips MOS11 Model
• Level 64: STARC HiSIM Model
To invoke the NQS model, specify the NQSMOD=1 parameter in the model card. You can use NQSMOD with any of the CAPMOD Levels (0-3) but only with Version 3.3 and 3.2. Version 3.0 and 3.1 do not support NQS.