I got data file of BJT in on-semiconductor, and simulate it using ADS and HSPICE.
Left figure shows ADS simul. and Right figure shows HSPICE simul.
THe y axis is the collector current. x axis is Voltage between (Col - Emitter)
the current bias at base was swept.
I think the ADS simulation is right. I don't know why the results from HSPICE simulation were so large.
Is there any options for DC analysis of BJT in HSPICE?
below sentences are the options i used.
***** Option *****
.option ACCURATE
.option post probe
*.option converge=1
*.option Method=gear
.option dccap =1
.temp 25
It looks like both simulations are not using the same transistor model. Why don't you compare with datasheet values to know which curves are more realistic?
The sharp corners in ADS are surely not real, at least too few points.
I guess some BJT parameters in your model is not included, and HSpice uses different default values as ADS when a parameter is missing. I would check default values of simulators (especially where the factor of difference is about 5 is not negligible), but I am not sure.