Hi, you can create your own transistor model. Here I give you some ideas:
1. Physicals models (Equation based on the physics of the transistor). This model is the industry standard and used a lot of parameters. Right now I am using the BISM3v3 to simulated a CMOS circuits.
2. Black box models (Equation based on measurements). NOT experience here.
3. Empirical models. (The most non linear elements like IDS and CGS are modelled with a equation based on measurements). In my master thesis I validated under different conditions, bias a input power (using one a two tone test) the Curtice’s, Angelov’s, and Chen’s I-V model for MESFET’s and HEMT’s. Here some bibliog..
Angelov, Iltcho, Zirath, Herbert, y Rorsman, Niklas, 1992. “A new empirical nonlinear model for HEMT and MESFET devices”. IEEE Transactions on Microwave Theory and Techniques. 40(12): 2258-2266 p.
Chen, Y.C., Ingram D.L., Yen, H.C., Lai, R., y Streit, D.C., 1998. “A new empirical I-V model for HEMT devices”. IEEE Microwave and Guided Wave Letters. 8(10): 342-344 p.
Curtice, W.R. y M. Ettenberg, 1985. “A non linear GaAs FET model for use in the design of output circuits for power amplifiers”. IEEE Transactions on Microwave Theory and Techniques. vol. MTT-33(12): 1383-1394 p.
4. Neuronals transistors models (Neuron trained with measured data). NOT experience here.
Let me know if you want to implant any of these models.
In the atttachement i send you some results.
Regards
FC