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How to simulate Y-parameter by HSPICE

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kelvint

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Hi

I would like to simulate all y-parameters(y11,y12,y21,y22) for MOS by using HSPICE (v2016.06-SP1). I found 2-methods from the web, but the result is different, I would like to know whether any of it is correct?


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*method-1
xm1 d g s b nfet w=1e-6 l=3e-9
vd d 0 dc vdd
vs s 0 
vb b 0
vg g 0 dc vgg ac 0.01
.ac lin 10 1e9 1e10
.net i(vd) vg rout=50 rin=50
.print ac y11(r) y11(i) y12(r) y12(i) y21(r) y21(i) y22(r) y22(i)
 
*method-2
xm1 d g s b nfet w=1e-6 l=3e-9
vs s 0
vb b 0
p1 g 0 port=1 dc=vgg z0=50
p2 d 0 port=2 dc=vdd z0=50
.ac lin 10 1e9 1e10
.lin
.print ac y11(r) y11(i) y12(r) y12(i) y21(r) y21(i) y22(r) y22(i)



Thanks!

Kelvin
 
Last edited by a moderator:

method-1 is correct.

You have to insert DC-block between port and DUT in method-2.
And you have to feed voltage bias via bias-feed like very large inductor.
 
Last edited:

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