teem
Junior Member level 1
- Joined
- Nov 17, 2009
- Messages
- 16
- Helped
- 0
- Reputation
- 0
- Reaction score
- 0
- Trophy points
- 1,281
- Activity points
- 1,408
Hi,
I use tsmc18 RF model to model my NMOS. The RF model of the NMOS itself is a sub-circuit.
When I run pss with spectreRF, it showed warning for the NMOS: "M0: Missing bulk-source diode would be forward biased", but I actually tied bulk and source together and they are tied to ground.
I run transient and probe the voltage of bulk and source(the same node actually), it's really at 0V.
Any seniors here have idea for such warning?
Beside, is it possible to voltage probe the internal node of the sub-circuit defined in RF model? I suspect the warning message is happened inside the sub-circuit of the RF model.
Thanks in advance for your comments.:razz:
I use tsmc18 RF model to model my NMOS. The RF model of the NMOS itself is a sub-circuit.
When I run pss with spectreRF, it showed warning for the NMOS: "M0: Missing bulk-source diode would be forward biased", but I actually tied bulk and source together and they are tied to ground.
I run transient and probe the voltage of bulk and source(the same node actually), it's really at 0V.
Any seniors here have idea for such warning?
Beside, is it possible to voltage probe the internal node of the sub-circuit defined in RF model? I suspect the warning message is happened inside the sub-circuit of the RF model.
Thanks in advance for your comments.:razz: