leohart
Full Member level 4
I was always thinking guardring is just a n+ vdd tieup ring for transistors in nwell and p+ gnd tiedown for transistors in psub.And if we need more latchup immunity,just use p+ gnd tiedown ring and a n+ vdd tieup nwell ring around,this is called double guardring.But this is only for nmos,how to do double guard ring for pmos in nwell?
But Art of analog layout said guard ring for nmos should use n+ guardring and it is tied to gnd??
But Art of analog layout said guard ring for nmos should use n+ guardring and it is tied to gnd??