Fei
Newbie level 6

How to design a bandgap voltage reference?
The architecture is the figure 11.20 in Razavi’s book
My target: Trying to find the value of W/L of transistors, Resistance to make this circuit generate a zero TC bandgap reference at 27 degree.
Problem: I can’t get the right result.
Global setting:Vdd=2.5 ; n=8 ; Q3=Q1; all L is identical, W of nmos is identical, W of pmos is identical;
I list down my procedure here, please help to check where is wrong, thank you.
1) Determine VBE0 at temp=27 degree
By simulation, I got the numbers:
When Ie = 10uA, VBE(n=1) =771.3 mV; VBE(n= 8 ) = 716.8mV, so deltaVBE=54.5mV
By calculation, (thermal voltage) Vt*ln8 = 54mV
2) R1 = deltaVbe/I = 5.45K ohm
3) To meet requirement: I=10uA, Vx = Vy at temp=27, and all the transistors should be in saturation region,
Set L=2um, then sweep W of pmos and nmos transistors.
Result: when (W/L)n = 13u/ 2u; (W/L)p = 4u/ 2u; I=10uA, Vx=Vy, drain voltage of M1 and M2 are almost the same.
4) It’s time to calculate R2 value
(R2/R1)* deltaVbe + VBE(Q3) = Vout;
To meet TC_vout | (temp=27) =0, R2/R1 should be around 8.
So, sweep the Resistance Ration from 7 to 8 by 0.1 step, the output shows like
When R2/R1 = 8, it is a increased line as temp increases
When R2/R1= 7, it is a decreased line as temp increases
When R2/R1 =7.5, it is the most flatten curve, then zoom in, I found the following curve, also the voltage is wrong.
The architecture is the figure 11.20 in Razavi’s book
My target: Trying to find the value of W/L of transistors, Resistance to make this circuit generate a zero TC bandgap reference at 27 degree.
Problem: I can’t get the right result.
Global setting:Vdd=2.5 ; n=8 ; Q3=Q1; all L is identical, W of nmos is identical, W of pmos is identical;
I list down my procedure here, please help to check where is wrong, thank you.
1) Determine VBE0 at temp=27 degree
By simulation, I got the numbers:
When Ie = 10uA, VBE(n=1) =771.3 mV; VBE(n= 8 ) = 716.8mV, so deltaVBE=54.5mV
By calculation, (thermal voltage) Vt*ln8 = 54mV
2) R1 = deltaVbe/I = 5.45K ohm
3) To meet requirement: I=10uA, Vx = Vy at temp=27, and all the transistors should be in saturation region,
Set L=2um, then sweep W of pmos and nmos transistors.
Result: when (W/L)n = 13u/ 2u; (W/L)p = 4u/ 2u; I=10uA, Vx=Vy, drain voltage of M1 and M2 are almost the same.
4) It’s time to calculate R2 value
(R2/R1)* deltaVbe + VBE(Q3) = Vout;
To meet TC_vout | (temp=27) =0, R2/R1 should be around 8.
So, sweep the Resistance Ration from 7 to 8 by 0.1 step, the output shows like
When R2/R1 = 8, it is a increased line as temp increases
When R2/R1= 7, it is a decreased line as temp increases
When R2/R1 =7.5, it is the most flatten curve, then zoom in, I found the following curve, also the voltage is wrong.