except switch capacitor and mos in triode (too large leakage)
do you kind to tell me the way to achieve a large resistor (>1G) in cmos process?
thank you very muchi
A series of a certain number of diode-connected NMOS transistors is suitable for realizing large resistors. They should have very low \[\left(\frac{W}{L}\right) \], about \[0.24/30 \mu \mbox{m}\]. Furthermore, if you have access to LVT (Low Threshold) or better to ZVT (Zero Threshold) NMOS's you should use those kinds of TR.