No, FvM stated exactly what has been reported by studies on DRAM technology, there is no known change in the memory cell of a DRAM no mater how may reads and writes are done to the memory cell. Read/write 1 time or 1,000,000,000,000,000,000,000,000 times and the cell will still be the same.
You seem to be convinced that there is a wear mechanism in DRAM and won't accept an accurate answer, that doesn't fit your preconceived belief then why did you bother asking the question in the first place? Maybe you think aging is the same thing as memory cell wear? Aging only takes applying power to the device, you don't even need to read/write to the memory cells for the device for it to eventually fail. Just applying power puts stress on the device's junctions with the increase in temperature, which can help cause metal migration, an other low level physical effects, that have nothing to do with read/write wear.
Flash suffers from read/write wear because physical changes occur on the die and the failure mechanism is due to (eventually after multiple P/E cycles) not being able to change the charge stored in the floating gate.