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To better understand, a tutorial is inadequate. You need a textbook, such as Semiconductor Device Fundamentals by Pierret.
Selfstudy of semiconductor physics is not a easy task. You may need some knowledge of solid state physics.
Why don't you go GOOGLE and type: SEMICONDUCTOR+BASICS
You will get more than 300 000 entries of which about 100 000 will be relevant (example **broken link removed** )
The best "tutorials" are in books for electronics.
Sendra/Smith Microelectronic Circuits have a simple yet very good presentation for semiconductors.
If you want something more advanced, with more explained mathematical psice models I suggest Lacker/Sansen " Design of Analog Integrated Circuits and Systems". Also very good and with layout examples.
If you really want to study semiconductors from scratch and go directly to the physical model, understand how carriers movea nd way, what happens in solid state then my friend one book is for you:
Tsividis " The MOS Transistor". But this is if you want to go into tinny details starting from the physics of a semiconductor and gradually upgrade to the basic MOST or more complex MOST structures.
Hope I helped,
D.
This is certainly not so very easy. You need to start from the modern physics, Solid state physics, band theory and then semiconductors (intrinsic or extrinsic) but for a very basic knowledge check out some "materials science" text book such as Materials Science and Engineering: An Introduction. Check:
I think ur Qs is a bit ambiguous in that if u need to know about SC just to get started in Electronics a prelimenary introduction to SC such as that Found in Sedra is adequite; whereas deep study in SC itself requires an advanced book such as the ones introduced above.
Introduction
0.1. The semiconductor industry
0.2. Purpose and goal of the Text
0.3. The primary focus: CMOS integrated circuits
0.4. Applications illustrated with computer-generated animations
Chapter 1: Review of Modern Physics
1.1. Introduction
1.2. Quantum mechanics
1.2.1. Particle-wave duality
1.2.2. The photo-electric effect
1.2.3. Blackbody radiation
1.2.4. The Bohr model
1.2.5. Schrödinger's equation
1.2.6. Pauli exclusion principle
1.2.7. Electronic configuration of the elements
1.3. Electromagnetic theory
1.3.1. Gauss's law
1.3.2. Poisson's equation
1.4. Statistical thermodynamics
1.4.1. Thermal equilibrium
1.4.2. Laws of thermodynamics
1.4.3. The thermodynamic identity
1.4.4. The Fermi energy
1.4.5. Some useful thermodynamics results
2.2.1. Bravais lattices
2.2.2. Miller indices, crystal planes and directions
2.2.3. Common semiconductor crystal structures
2.2.4. Growth of semiconductor crystals
2.3. Energy bands
2.3.1. Free electron model
2.3.2. Periodic potentials
2.3.3. Energy bands of semiconductors
2.3.4. Metals, insulators and semiconductors
2.3.5. Electrons and holes in semiconductors
2.3.6. The effective mass concept
2.3.7. Detailed description of the effective mass
2.4. Density of states
2.4.1. Calculation of the density of states
2.4.2. Density of states in 1, 2 and 3 dimensions
2.5. Carrier distribution functions
2.5.1. The Fermi-Dirac distribution function
2.5.2. Example
2.5.3. Impurity distribution functions
2.5.4. Other distribution functions and comparison
2.5.5. Derivation of the Fermi-Dirac distribution function
2.6. Carrier densities
2.6.1. General discussion
2.6.2. Calculation of the Fermi integral
2.6.3. Intrinsic semiconductors
2.6.4. Doped semiconductors
2.6.5. Non-equilibrium carrier densities
2.7. Carrier transport
2.7.1. Carrier drift
2.7.2. Carrier mobility
2.7.3. Velocity saturation
2.7.4. Carrier diffusion
2.7.5. The Hall effect
2.8. Carrier recombination and generation
2.8.1. Simple recombination-generation model
2.8.2. Band-to-band recombination
2.8.3. Trap-assisted recombination
2.8.4. Surface recombination
2.8.5. Auger recombination
2.8.6. Generation due to light
2.8.7. Derivation of the trap-assisted recombination
2.9. Continuity equation
2.9.1. Derivation
2.9.2. The diffusion equation
2.9.3. Steady state solution to the diffusion equation
2.10. The drift-diffusion model
2.11 Semiconductor thermodynamics
2.11.1. Thermal equilibrium
2.11.2. Thermodynamic identity
2.11.3. The Fermi energy
2.11.4. Example: an ideal electron gas
2.11.5. Quasi-Fermi energies
2.11.6. Energy loss in recombination processes
2.11.7. Thermo-electric effects in semiconductors
2.11.8. The thermoelectric cooler
2.11.9. The "hot-probe" experiment
4.2.1. Flatband diagram
4.2.2. Thermal equilibrium
4.2.3. The built-in potential
4.2.4. Forward and reverse bias
4.3. Electrostatic analysis of a p-n diode
4.3.1. General discussion - Poisson's equation
4.3.2. The full-depletion approximation
4.3.3. Full depletion analysis
4.3.4. Junction capacitance
4.3.5. The linearly graded p-n diode
4.3.6. The abrupt p-i-n diode
4.3.7. Solution to Poisson's equation
4.3.8. The heterojunction p-n diode
4.4. The p-n diode current
4.4.1. General discussion
4.4.2. The ideal diode current
4.4.3. Recombination-generation current
4.4.4. I-V characteristics of real p-n diodes
4.4.5. The diffusion capacitance
4.4.6. High injection effects
4.4.7. p-n heterojunction current
4.8.1. The solar spectrum
4.8.2. Calculation of maximum power
4.8.3. Conversion efficiency for monochromatic illumination
4.8.4. Effect of diffusion and recombination in a solar cell
4.8.5. Spectral response
4.8.6. Influence of the series resistance
4.9. Light Emitting Diodes (LEDs)
4.9.1. Rate equations
4.9.2. DC solution to the rate equations
4.9.3. AC solution to the rate equations
4.9.3. Equivalent circuit of an LED
4.10. Laser diodes
4.10.1. Emission absorption and modal gain
4.10.2. Principle of operation of a laser diode
4.10.3. Longitudinal modes in the laser cavity
4.10.4. Waveguide modes
4.10.5. The confinement factor
4.10.6. The rate equations for a laser diode
4.10.7. Threshold current of multi quantum well laser
4.10.8. Large signal switching of a laser diode
5.3.1. Forward active mode of operation
5.3.2. General bias modes of a bipolar transistor
5.3.3. The Ebers-Moll model
5.3.4. Saturation.
5.4. Non-ideal effects
5.4.1. Base-width modulation
5.4.2. Recombination in the depletion region
5.4.3. High injection effects
5.4.4. Base spreading resistance and emitter current crowding
5.4.5. Temperature dependent effects in bipolar transistors
5.4.6. Breakdown mechanisms in BJTs
5.5 Base and Collector transit time effects
5.5.1. Collector transit time through the base-collector depletion region
5.5.2. Base transit time in the presence of a built-in field
5.5.3. Base transit time under high injection
5.5.4. Kirk effect
5.6 BJT circuit models
5.6.1. Small signal model (hybrid pi model)
5.6.2. Large signal model (Charge control model)
5.6.3. SPICE model
5.7. Heterojunction bipolar transistors
5.8. BJT technology
5.8.1. First Germanium BJT
5.8.2. First silicon IC technology
5.9. BJT power devices
5.9.1. Power BJTs
5.9.2. Darlington Transistors
5.9.3. Silicon Controlled Rectifier (SCR) or Thyristor
5.9.4. DIode and TRiode AC switch (DIAC and TRIAC)
6.3.1. Flatband voltage calculation
6.3.2. Inversion layer charge
6.3.3. Full depletion analysis
6.3.4. MOS Capacitance
6.4. MOS capacitor technology
6.5. Solution to Poisson's equation
6.5.1. Introduction
6.5.2. Electric field versus surface potential
6.5.3. Charge in the inversion layer
6.5.4. Low frequency capacitance
6.5.5. Derivation
Appendices
A.1 List of Symbols
List of symbols by name
Extended list of symbols
A.2 Physical constants
A.3 Material parameters
A.4 Prefixes
A.5 Units
A.6 The greek alphabet
A.7 Periodic table
A.8 Numeric answers to selected problems
A.9 Electromagnetic spectrum
A.10 Maxwell's equations
A.11 Chemistry related issues
A.12 Vector calculus
A.13 Hyperbolic functions
A.14 Stirling approximation
A.15 Related optics
A.16 Equation sheet
I suppose the best way is to search the internet for animations like the one bbgil has sent. Or use wikipedia or Encarta encyclopedia where simple and straight forward information is introduced.
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