Hi,
I have a question on the gate direction of mos transistor in layout. We know, in layout, for the matched transistor/device, they are asked to place in the same orientation to keep matching. But for those unneedded transistors, are they needed to place in the same orientation? Place them in different orientation will afect the product yield?
hi,vbhupendra
Thanks for the reply! Would you like to elaborate it a bit more? We passed the design in full case. So for the mos transistor, we confirmed it with typ,ss,ff,sf and fs. It can not guarantee all the corners fall into this range?
In general practice the matched devices should be placed in the same orientation.If differs the mobility og=f the caarriers changes inturn mobility related to the gain,current....All these quantities will change. u can place other devices which requires no matching in different orientation.
Hi,
I have a question on the gate direction of mos transistor in layout. We know, in layout, for the matched transistor/device, they are asked to place in the same orientation to keep matching. But for those unneedded transistors, are they needed to place in the same orientation? Place them in different orientation will afect the product yield?
If you are talking about horizontal poly and vertical poly then...generally we like to keep safe and matched transisitors are oriented in same direction. topologies of common centroid are followed. but in case you have a very stable process where the foundry guarantees proper construction you can have exceptions that is very rare to my knowledge...but it does happen atleast in digital core of your chip...yeild to size tradeoffs do exist...
My opinion is that it will not affect anything. However, take for another case that you have two groups of matching transistors, but the two groups need not be matched. It is still good to put the transistor in both groups in the same orientation because it allow the process engineer to optimise the fabrication process to achieve better yield.
hi,vbhupendra
Thanks for the reply! Would you like to elaborate it a bit more? We passed the design in full case. So for the mos transistor, we confirmed it with typ,ss,ff,sf and fs. It can not guarantee all the corners fall into this range?
For deep submicron technology such as 65nm or 45nm, in general only one poly(active) direction is allowed. But for other not so deep submicron technology, it maybe OK for using 2 poly directions to those non-critical circuitry.
Hi,
The basic rule for matching is the orientation, but we may not follow the orientation for the whole chip. But if you follow orientation throughout the chip, the performance of your chip will be better ( It meets what designer wants ), Please refer to the ion implantation effects in razavi (last chapter). And think urself what happens to other transistor functionality if you dont follow orientation.
Thanks & REgards,
Shiva.