umaa
Newbie level 2
hallo,
i intend to measure the residual stresses in the miltilayer structure of MEMS. the concept of pressuer sensors is applied here by surface machining four 40 nm thick Pt maender strain guages connected as full whaet stone bridge. with teh same dimension two act as longitudional and two as transverse (room tempertaure evaportaed in teh middle of edges of silicon nitride dielectric) burried under 1 µm TEOS layer. an additional centeral resisor is also designed.
1. how do they react to the stresses prodeced by curvature of 8 inchh silicon (720 m) wafer as result of thermomechanical mismatch.
2. Pt sensors are at teh same time sensitive to the temperature as well (TCR). what would be teh best way to measure their sensitivity.
3. how could teh respond to teh solder bonding when silicon wafer with same thickness is caped on MEMS wafer
Regards
umaa
i intend to measure the residual stresses in the miltilayer structure of MEMS. the concept of pressuer sensors is applied here by surface machining four 40 nm thick Pt maender strain guages connected as full whaet stone bridge. with teh same dimension two act as longitudional and two as transverse (room tempertaure evaportaed in teh middle of edges of silicon nitride dielectric) burried under 1 µm TEOS layer. an additional centeral resisor is also designed.
1. how do they react to the stresses prodeced by curvature of 8 inchh silicon (720 m) wafer as result of thermomechanical mismatch.
2. Pt sensors are at teh same time sensitive to the temperature as well (TCR). what would be teh best way to measure their sensitivity.
3. how could teh respond to teh solder bonding when silicon wafer with same thickness is caped on MEMS wafer
Regards
umaa
