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Unfortunatelly, you can not avoid flicker noise in CMOS design. The source is imperfections in substrate-oxide region which cause random charge trapping and release of electrons. This is intrinsic to MOS transistor design so it can not be fully avoided, but it can be controlled to some point.
In general, reasons for high flicker noise in bandgaps are short transistors and improper bias point in your opamps. Avoid any pinching-off of the transistors (i.e. insure that most of the current does not flow on the surface) and make them bit longer and you should be fine.
Avoid any pinching-off of the transistors (i.e. insure that most of the current does not flow on the surface) and make them bit longer and you should be fine.
I usually do it by decreasing Vds and insuring that Vgb is high. This way I have both Vgs and Vgd relatively high, hence no pinching effect on either side of the channel. Unfortunately, in diode connected transistor you can not play with Vgd, so for current mirrors this will not work. You will have to play with current density.
I usually do it by decreasing Vds and insuring that Vgb is high. This way I have both Vgs and Vgd relatively high, hence no pinching effect on either side of the channel. Unfortunately, in diode connected transistor you can not play with Vgd, so for current mirrors this will not work. You will have to play with current density.
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