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I = ( V1 - V_gs) / 10k (calculated with the voltage across R which depends on V_gs)
And the mosfet has it's own characteristic.
I mainly depends on V_gs, but also on V_ds.
Now you have two I, both needs to be equal.
You can solve this mathematically or by drawing a chart.
You have the MOSFET inverted, so the MOSFET will conduct through the substrate diode.
Since you have the gate tied to the source the Vgs is zero.
For a diode-connected MOSFET you would invert the MOSFET with the gate still connected to V1.
In that case Vgs would be slightly above its threshold voltage.
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