Andrew77
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Hello,
Working on a project of a high power (150W), wide band (VHF through UHF) amplifier using GaN hemt transistors I noticed failures in Gate (ie gate pad shorts toward ground/source) when used on saturated power environment in fast sweeping frequencies as a source
I did a lot of efforts to tackle this phenomenon: high current source for gate (Ig), compensation networks to increase the flatness through the whole band, etc..
I'm starting to infer that the rapid change in frequency source (100 Khz to 1 Mhz) such as sweeping frequency very similar to that used for jammers, could harm the device
I haven't found any research that prove that,
if anyone has any suggestions is welcome
tks
Working on a project of a high power (150W), wide band (VHF through UHF) amplifier using GaN hemt transistors I noticed failures in Gate (ie gate pad shorts toward ground/source) when used on saturated power environment in fast sweeping frequencies as a source
I did a lot of efforts to tackle this phenomenon: high current source for gate (Ig), compensation networks to increase the flatness through the whole band, etc..
I'm starting to infer that the rapid change in frequency source (100 Khz to 1 Mhz) such as sweeping frequency very similar to that used for jammers, could harm the device
I haven't found any research that prove that,
if anyone has any suggestions is welcome
tks