biff44
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Have a project where I need a RF SP2T or evern better SP3T switch. It has to handle 300 watts at 300 MHz, transmit on for 70 nS/off for 700 nS. It would be nice if the switching time from insertion loss to isolation was maybe 100 nS. Switch will hook transmitter and receiver to the same antenna. Need perhaps 45 dB isolation (tbd).
Don't think I can do that with Silicon PIN diodes. Was wondering if anyone has done something like that using power mosfets.
Don't think I can do that with Silicon PIN diodes. Was wondering if anyone has done something like that using power mosfets.
