ljy4468
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bluesmaster said:diffusion is better, if you use poly ,layout it as dogbone.
jecyhale said:I think there is no difference between them. because its purpose is to provide a Voltage when there a current flow through it. I use the poly resistor but you should pay attention the width of it. because there will be a very current about 1A.
So the width of it should more than 10um usually.
the value of it can be set between 100Ω to 300Ω.
prcken said:jecyhale said:I think there is no difference between them. because its purpose is to provide a Voltage when there a current flow through it. I use the poly resistor but you should pay attention the width of it. because there will be a very current about 1A.
So the width of it should more than 10um usually.
the value of it can be set between 100Ω to 300Ω.
i don't think there is lots of current flowing through the resistor contacted between the GND and the gate of GGNMOS (as ESD protection device)
jecyhale said:prcken said:jecyhale said:I think there is no difference between them. because its purpose is to provide a Voltage when there a current flow through it. I use the poly resistor but you should pay attention the width of it. because there will be a very current about 1A.
So the width of it should more than 10um usually.
the value of it can be set between 100Ω to 300Ω.
i don't think there is lots of current flowing through the resistor contacted between the GND and the gate of GGNMOS (as ESD protection device)
Hi, Prcken
Is there a Resistor connected between the GND and the gate of GGNMOS for ESD application?
I haven't used this structure. Usually, I only use the GGNMOS connected to GND and the resistor just connect the pad and the gate of input MOS.
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