Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

[SOLVED] Equation for Gate Oxide Breakdown Voltage in Power MOSFET

Status
Not open for further replies.

darkseid

Member level 1
Member level 1
Joined
Nov 9, 2010
Messages
40
Helped
5
Reputation
10
Reaction score
4
Trophy points
1,288
Visit site
Activity points
1,536
Hi

Is there any equation to calculate the maximum gate voltage that can be applied to the gate of a power MOSFET without oxide breakdown, other than the generic equation: E = V/tox

regards
Darkseid
 

That's it, only you don't know Ecrit (unless the mfr likes
to share detailed qual data from test-to-fail) and you
don't know V in the off state (being dropped by the neck
depletion region, more or less) and tox isn't always
shared either.

The mfr tells you what they'll stand up for, beyond that
it's on you. And they design them such that Ron is all
in before you hit Vgs(max) so there's no real reason to
go over the top.
 
The gate oxide breakdown voltage should depend on the oxide quality and density.
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top