Drain diffusion area is area of the drain diode?

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shaq

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Dear all,

In Hspice manual, I see the different definition of AD.

At "Active Elements" section in Hspice manual, AD is "drain diffusion area."
At "MOSFET Output Templates" section, I see its definition is changed to "area of the drain diode."

Does it mean the same thing?
 

NO; it's wrong

Source and drain areas are defined by diffusing areas on either side of the
gate polysilicon.

g@fsos
 

user raptor1981 wrongly posted reply to report system:

hi, AD is the drain area of MOSFET . AD is not related with the diode area . This can be observed from the model file of AMS , here there are specific models for all elements . For further details please refer to the website ( search by ams )
 

AD, like the others said, is the Drain area (Channel Width * Drain Length). The area of drain diode is the area at the botton of the diffusion plus the area of the difusion sidewalls. The picture gives a better explanation.



Added after 1 minutes:

Ps: in the picture the Drain Length is X.
 

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