Impurities may or may not be trap sites.
Dopant is desired to be substituted fully into the lattice
and then it becomes electrically active (in a good way).
Semiconductor properties are about the lattice, not the
individual atoms here or there.
Unsubstituted (interstitial) dopant atoms are a disorder
and disorder is what gives you the anomalous short
range order that has differing potential-pockets (traps).
Other impurities matter as well; high end audio folks
specify low-oxygen starting material and so on.
An electron that does "jump to CB" in P-type will be a
minority carrier and recombine whence it came in short
order. How short, is doping dependent.