Cree states " This is a majority carrier diode, so there is no reverse recovery charge" but then no test results are given.
There are 4 separate losses; 2 dynamic , turn On, off and steady On conduction loss and reverse leakage loss.
But the switch interaction be included as losses and gains interact between diode and switch. Then there is a designer option of di/dt effects.
It turns out Cree's majority carrier Si-C power diode has worse conduction losses than similar Si diodes but much lower dynamic losses and zero reverse loss. Apparently that link reports improvement with higher di/dt on Si-C diodes so the net gain is lower losses at higher frequency switched loads.
They cost a lot more though.
Here Si-C diode is compared with others with 2006 technology.
Si-C has improved for superior performance and like MOSFETs have in recent years, expect more improvements in future.
Also GaN diodes have similiar lower dynamic losses and higher dynamic prices.
**broken link removed**