Not "surely" until you get some relevant bond wire,
and behind that chip interconnect, pulsed power-
to-blow data.
From the datasheet it looks like the series R of the
diode is about 0.5 ohms. The data does not extend
to even 1A. Vf is 1.6V at 0.2A. At 1A would expect
2.0V Vf and at 90A, 46V.
1A*2V*10ms=20mJ
90A*46V*2us=8mJ
deposited primarily in the semiconductor active
volume (forward junction and access resistances).
But the problem is in the quick-time thermal energy
removal (which is likely nil in the 2us quasi-adiabatic
case and can be a lot of it, via lead conduction and
spreading to adjacent material volumes, in the 10ms
case). That, and the question of the non-silicon
features such as bond wires - where I have seen data
saying no way is 1.25 mil aluminum good for 90A even
at 1u but more than a factor of 10 less (and with so
low a rated current it's unlikely that bond wires used
are anything above minimum (1mil Au or 1.25 mil Al).
Since you cannot indicate what the failure mode is,
you can't say which feature dominates abuse mode
reliability. Don't assume it is the silicon volume or that
all mechanisms are simply linear in time.
I could add that in the time this thread has been simmering
somebody could have acquired samples and pulled data.
I would not depend on internet contributed guesstimates to
replace that.