Compared to standard “ultra-fast” power diodes, silicon Schottky devices offer better performance because of their lower forward drops and reduced forward and reverse recovery characteristics. This allows the minimization of switching losses by reducing the “on-to-off” and “off-to-on” transition times, decrease total power loss and reduce component size by increasing switching frequency.
So we choose a normal schottky or a SiC (silicon carbide ) schottky(if available).