Hi
The question which I want to clearify is about bulk driven technique. Input signal (AC +DC) is applied at the bulk of the input transistors. What input DC common mode voltage I can apply? When I am applying a DC voltage lets say 200mV and voltage at the source of input transistors(PMOS) has a DC voltage lets 380mV (which I am getting in my circuit). It means the internal parasitic diodes between the bulk and source will get forward bias which should not be the case.
To make the parasitic diodes between bulk and source reverse biased, the bulk DC voltage applied should be greater than 380mVs.This means I have to apply 380mV at every cost in case of bulk driven I have to apply at the bulk and if we use gate driven we have to apply it at the gate because threshold voltage is somewhere around 0.4V. Then why we say bulk driven is used for low supply as in both cases( gate driven and bulk driven) a DC voltage input of greater than 380mV is applied?
Secondly in papers its mentioned bulk driven reduces the threshold voltage from signal path . Is it because at the bulk we dont need threshhold voltage for channel formation?