Read carefully. The test condition is that the case of the BJT is kept at 25°C. Not higher.I'm thinking to order another BJT like the BU406 which is 60W.
Please undrstand that r_th_ja depends on heat spreading and not on silicon.Klausst the idea is to get a BJT that can stand at a higher power and with a low r_th_ja?.
You can´t prevent the circuit from generating heat. That´s physics.I have put a resistor between Emitter of Q1 and base of Q2 and it is performing better, but it gets quite hot. I think the fact that there was no resistor at all was creating the situation that all the current was going though Q4. Does it make any sense??.
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