mhrnaik
Newbie level 1
nmos bulk and source
Hello,
I am designing an amplifier which has to switch ON and OFF approximately 30 times per second. The amplifier is a folded cascode OPAMP with 2 gain boosting stages. When I run simulations, I get very good results for the bulk and source for all transistors connected together. Now I am drawing the layout of this amplifier.
As I understand, if there is an isolation layer of n-well b/w the substrate of the chip and the substrate (p-) layer of the nmos, I should be fine shorting these two conenctions together. Maybe I should use a deep n-well layer b/w the substrate of the chip and the nmos substrate?
If this is the case, can anyone tell me what purpose this isolation layer serves? Thanks.
Hello,
I am designing an amplifier which has to switch ON and OFF approximately 30 times per second. The amplifier is a folded cascode OPAMP with 2 gain boosting stages. When I run simulations, I get very good results for the bulk and source for all transistors connected together. Now I am drawing the layout of this amplifier.
As I understand, if there is an isolation layer of n-well b/w the substrate of the chip and the substrate (p-) layer of the nmos, I should be fine shorting these two conenctions together. Maybe I should use a deep n-well layer b/w the substrate of the chip and the nmos substrate?
If this is the case, can anyone tell me what purpose this isolation layer serves? Thanks.