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Chip Edge and Chip Guard Ring

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powerofthedream

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Dear Friends,

As you may know that, the chip edge has to connect to some voltage level or the DRC will report the error, so I have done my Chip edge as below:

Chip_Edge_Gnd.png

as illustrated, the chip edge has been connected to the LNA_GND, I hope this should be all right.

And furthermore, I have simply given the chip guard rings as below:

Chip_Edge 2.png

Thanks so much again for your opinions.
 

"Has to", must be foundry and/or flow specific because
in 30+ years of doing IC design and layout I have yet
to encounter such a requirement. But I play in kooky
SOI foundries / flows pretty much.

I would pick the quietest negative potential and probably
resistor-degenerate the ring bias to minimize ground
pumping by fast signals (the edge seal is a big antenna).
Which

Those "guard rings" look like simple metal bussing to me,
while guardrings imply silicon P+ and N+ regions with
structure intended to extract substrate currents (ohmic)
and loose minority carriers (biased depletion regions).

I think you want to understand the intent of these structures
and find any foundry guidance as far as approved schemes
(probably a "scribe" PCell in the PDK?).
 

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