Characterization of schottky diode for rectenna

[ice.deepcold]

HEllo,
I am trying to design a rectenna that resonates at 2.4GHz. I just got done building my microstrip patch antenna and all I'm missing is my rectifying circuit which consists of a diode and capacitor. I just bought a schottky diode (HSMS 282p) and I 'm trying to characterize it but I dont know where I should start from?
Does anybody have any papers that will teach me how to model or charaterize a diode? I really have no idea what I should be my first step

thank u very much

 

[vfone]

Below you can find more information about zero bias detectors using Schottky diodes, regarding parameters need to be measured as: voltage sensitivity, forward voltage characteristic, load resistance, reflection loss, etc.

**broken link removed**
http://www.hpl.hp.com/hpjournal/95dec/dec95a12.pdf

 

[eng.asi]

hi
these links don't work is there any other links that would help
thanks in advance

 

[jiripolivka]

The best way to get real data is to do experiments. As you already have good Schottky diodes, mount them in the center of a half-wave dipole and take data when a small 2.45 GHz transmitter is active some 50-100 cm away from the dipole.

Rectenna detectors have specific problems in that the diode impedance varies with incident RF power, and also depends on load impedance. Most people use a DVM to detect the rectified voltage but the rectenna should deliver a DC power.
Most Schottky detectors have also a limiting RF input power, usually < 10 mW; then they reflect the incident power back.
In a rectenna you have a matrix of closely located detectors in dipoles or other antennas, and they mutually interact as the function of all above.
I have seen many simulations and thoughts but no really working design with any reasonable efficiency. Please let me know if you achieve an efficiency better than 10%.