bhagyasree
Newbie level 5

hi,
In well proximity effect the concentartion of nwell is not uniform so transistors placed at different locations will have different Vt,Id. Is there any differnce in Vt or Id for source oriented and drain oriented transistors?
Thanks,
bhagyasree
In well proximity effect the concentartion of nwell is not uniform so transistors placed at different locations will have different Vt,Id. Is there any differnce in Vt or Id for source oriented and drain oriented transistors?
Thanks,
bhagyasree