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Calculating MOS capacitance in Cadence

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EngrFZ

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I am interested to know that why do MOS capacitance values (Cgs,Cgg,Cdd etc) calculated from AC analysis deviate from the values calculated by formulae that are present in VLSI books. Simulations are based upon BSIM models. The value they manifest in AC or transient or any other type of simulation rely upon the values of
BSIM. When we have those values, then why or how does the capacitance formulae in simulator differ from the ones given in literature? An urgent reply will be highly
appreciated.
 

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