identical
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Forward biasing the body lowers the threshold voltage and RBB(apply a negative voltage on substrate) makes the threshold voltage higher. However from this formula:
Vt=Vt0+γ(√(Vsb+2ΦF)-√(2ΦF))
The opposite happens to be true for nmos (Since Vsb is Vs-Vb). Making Vsb negative (by increasing negative Vb) for an nmos make Vt less than what it was initially. Any reason why
Vt=Vt0+γ(√(Vsb+2ΦF)-√(2ΦF))
The opposite happens to be true for nmos (Since Vsb is Vs-Vb). Making Vsb negative (by increasing negative Vb) for an nmos make Vt less than what it was initially. Any reason why