Does anybody know the differences between bipolar RAM and MOS RAM except number of transistors used within cells?
Which one is favored by the industry and Why?Thanks.
MOS RAM is preferred because:
1. MOS have less leakage current than BJT. So power consumption is less.
2. MOS transistor has smaller size than BJT. So it gives high packing density.
3. MOS fabrication have less number of fabrication step than BJT. Also fabrication of MOS much simpler than BJT.