Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

A question about the MOS noise parameter \gamma in simulator

Status
Not open for further replies.

freewisp

Newbie level 3
Joined
Jul 20, 2007
Messages
3
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,301
mos noise

We know the channel noise of MOSFET can be expressed as 4kTγgd0(γ=2/3 for long channel). When it comes to deep sub-micro technology,its value is much higher than 2/3.
The question is when I simulate the LNA noise figure in spectre RF, according to the simulated results, I found γ is much closer with 2/3. I wonder how the simulator calculates this parameter. and whether we could trust this result.
Thanks
 

hn1

Advanced Member level 4
Joined
Oct 28, 2006
Messages
105
Helped
5
Reputation
10
Reaction score
0
Trophy points
1,296
Activity points
1,872
It depends on the technology model file that you are using. If you are using deep submicron technology the value of gamma is close to 4/3.
and for long channel devices as you mentioned it is equal to 2/3.
 

freewisp

Newbie level 3
Joined
Jul 20, 2007
Messages
3
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,301
Re: A question about the MOS noise parameter \gamma in simul

I use TSMC0.13um technology,but it seems the spectre RF underestimates the noise figure,i.e. it underestimates the value of γ...
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Top