# A question about the MOS noise parameter \gamma in simulator

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#### freewisp

##### Newbie level 3
mos noise

We know the channel noise of MOSFET can be expressed as 4kTγgd0(γ=2/3 for long channel). When it comes to deep sub-micro technology,its value is much higher than 2/3.
The question is when I simulate the LNA noise figure in spectre RF, according to the simulated results, I found γ is much closer with 2/3. I wonder how the simulator calculates this parameter. and whether we could trust this result.
Thanks

#### hn1

##### Advanced Member level 4
It depends on the technology model file that you are using. If you are using deep submicron technology the value of gamma is close to 4/3.
and for long channel devices as you mentioned it is equal to 2/3.

#### freewisp

##### Newbie level 3
Re: A question about the MOS noise parameter \gamma in simul

I use TSMC0.13um technology,but it seems the spectre RF underestimates the noise figure,i.e. it underestimates the value of γ...

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