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Can I use ion implementation fro oxidation?

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vlsi

Can you elaborate a bit more? as far as I know Ion
implantation is NOT used for oxidation rather its used for doping.
 

Re: vlsi

Hii,

I too don't think that ion implantation is used for oxidation.
Ion implantation is used for the doping of impurities into confined area. Where as oxidation is to form an oxide layer over the entire surface of the substrate.
 

Re: vlsi

oxidation is selfactivation process in fab you dont need any ionimplantetion,
even after 15-20min a layer is created itself on silicon about 0.1-0.2um.
it is not desired .
 

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