Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
Coverning the MOSFET transistor,
First, when apply Vgs , it causes a field that starts to repulse the majority carriers at the substrate .This causes "the depletion region" i.e depleted from majority carriers .On increasing Vgs more, the field starts to attract minority carriers from the substrate and from the 2 n+ drain and source regions .This is called "inversion" .These carriers collected during inversion form the channel which causes the current at the transistor .Strong inversion occurs above the threshold voltage of the transistor .
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
