desperado0729
Newbie level 6
We are now doing a SOC project for Bluetooth.
Because of a noisy substrate, we use a wide deep nwell trench to isolate RF circuits and digital circuits.
We are wondering if we can put the whole digital circuits on the top of the deep nwell to improve the isolation further. Because the deep nwell is usually connected to VDD, there is going to be a PN diode between deep nwell and pwell. We are concerned that this PN diode may degrade the speed of digital circuits.
Could any experienced guy give us some opinions or instructions about this issue?
Our digital circuits are opearting at 2X~48 MHz.
Thanks in advance.
Because of a noisy substrate, we use a wide deep nwell trench to isolate RF circuits and digital circuits.
We are wondering if we can put the whole digital circuits on the top of the deep nwell to improve the isolation further. Because the deep nwell is usually connected to VDD, there is going to be a PN diode between deep nwell and pwell. We are concerned that this PN diode may degrade the speed of digital circuits.
Could any experienced guy give us some opinions or instructions about this issue?
Our digital circuits are opearting at 2X~48 MHz.
Thanks in advance.