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I think EOS is more related to the measure of gateoxide lifetime of the device. While ESD is a measure of how well the chip can absorb high voltage spikes. For your question, sorry i don't know what is the RA test.
Electrical Overstress, or EOS, is a failure mechanism wherein the device is subjected to excessive voltage, current, or power. Electrostatic Discharge, or ESD, is a special type of EOS mechanism in the form of a single-event, rapid transfer of electrostatic charge between two objects
EOS as stated earlier is any Volt or Current condition outside a circuits normal operating conditions. The resulting failures manifest themselve as dielectric ruptures (over voltage) or thermal damage (over current/power). ESD typically has a very small amount of total energy available so the damage is smaller and more contained within a single device or even on small section of a device. EOS on the other hand has large amount of energy available (i.e. power supply tranisent). The damage can melt metal lines, bond wires, and fuse plastic package to the die surface.
The difference between ESD and EOS is the amount of damage done as estimated by the energy available in the event.
Attached is a paper Titled: "Physical Failure Anaysis to Distinguish EOS and ESD Failures" that may be helpful. I'm sure there are others you could find on the WEB that are similar topics.
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