Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Well Proximity Effects (WPE): Is there any difference between PMOS and NMOS devices?

Status
Not open for further replies.

senmos

Newbie level 4
Joined
May 21, 2020
Messages
6
Helped
0
Reputation
0
Reaction score
0
Trophy points
1
Activity points
92
Hi,

I made a research about WPE and I have seen that below some distance there is not any difference between PMOS and NMOS devices, i.e. in both cases the voltage threshold increases.

But I am not sure if this conclusion is correct or if there are another properties that can be different due to its mobility carriers variation, stress/strain effects, ...

Thanks in advance
 

Proximity effect might be strain, litho field loading,
autodoping, etch interactions with previous cuts.
You'd have to dig deeper into a specific fabrication
flow, to say which (subset) are involved and probably
do this using physical material designed to exercise
these "features" such that they can be separated,
run through test flows which omit a doping but keep
the etches and thermal steps, etc. of one split and
contrariwise, on another.
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top