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    Corner Tightening in Adaptive body bias

    Can anyone explain what is Corner Tightening in body bias? I have some confusions regarding this topic. Please explain

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    Re: Corner Tightening in Adaptive body bias

    You'd like your body biasing to end up making
    some device attribute as-desired. Without making
    a mess of another.

    Global bulk biasing in FDSOI can (for example)
    make PMOS leak while driving down leakage on
    NMOS.

    You can put a body-biased device inside a feedback
    loop against some leakage proxy, and make the
    NMOS shut up.

    You could create a feedback element which looks
    at minimizing the sum of NMOS and PMOS leakage,
    to put you in Happy Valley.

    Putting the body parasitic BJT into forward active
    operation, or even snuggling up to it, is not great
    for some environments where you'd like a hard
    low-Z body tie (even if you have to eat some surface
    channel leakage). And this can be a failing of servo
    body bias schemes, an insufficient drive and response
    time to deal with devices that are being pushed
    toward snapback / single transistor latching / 4-layer
    latchup / impact ionization / breakdown (and using
    a device at one Vds to control others at different
    Vds and Vgs, might be sloppy).



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  4. #4
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    Re: Corner Tightening in Adaptive body bias

    But why corner tightening is required ? is it because we need optimised performance and reduced delay ?



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