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Properties of MIM capacitors

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Mykrolian

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I have been looking and looking, yet I've found very little detailed information on MIM capacitors.
What is the voltage coefficient?
What is the temperature coefficient?


Best Regards,
Mykrolian
 

You must not have been looking at the documentation
from any foundry that offers MIM caps on their process
flows.

Looking at generic information isn't all that helpful
because the MIM cap dielectric and its location in the
interconnect stack, hence its explicit C, parasitic C and
R, will vary fab to fab and flow to flow.

But generically, voltco and tempco are zero-ish because
there is no semiconductor element - only metal (duh)
and insulator (duh) and more metal.

If you can find the dielectric material (usually SiO2, but
there are others) then you can go look up the permittivity
of the material as a function of temperature and applied
field.
 

There are tons of data on MIM capacitors in the literature - check this paper, as an example, and its citations:

J. A. Babcock et al., "Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics," in IEEE Electron Device Letters, vol. 22, no. 5, pp. 230-232, May 2001.

https://ieeexplore.ieee.org/abstract/document/919238/citations?tabFilter=papers#citations

Voltage dependence, frequency dependence, temperture dependence - are all important for precision analog applications.
Of course, linearity is much better for MIM structures, than for semiconductor devices.

But, there is a great variety of materials, structures, etc. used for MIM capacitors.
Different foundries offer different options.
For a specific foundry, you should look at the electrical design rule manual.
For general properties, and for general information - look at the literature (e.g., at IEEEXplore).
 

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