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    Leakge current in low Vt cells

    Why leakage current in low Vt cells is high as compare to high Vt cells ?

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  2. #2
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    Re: Leakge current in low Vt cells

    Because the subthreshold slope has not intersected the
    junction leakage floor by the time you hit Vgs=0.

    This not only makes the leakage higher, it makes it highly
    variable - a nominal 80mV/decade means that if your VT
    of 200mV (low-VT) has a +/-100mV tolerance the real
    leakage current could vary upward by over a decade at
    Vgs=0 (or downward, but nobody cries about that).
    And even at nominal, 2.5 decades (for 200mV/80mV)
    means you'd leak about 3nA per transistor (where a
    good long channel high VT FET should be femtoamp
    range). Now figure your LVT transistor count.



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  3. #3
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    Re: Leakge current in low Vt cells

    Quote Originally Posted by riti View Post
    Why leakage current in low Vt cells is high as compare to high Vt cells ?
    Simply put, because low Vt cells are designed for performance. The trade-off is that the threshold is so low/narrow, that it leaks more.
    Really, I am not Sam.


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