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Leakge current in low Vt cells

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riti

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Why leakage current in low Vt cells is high as compare to high Vt cells ?
 

Because the subthreshold slope has not intersected the
junction leakage floor by the time you hit Vgs=0.

This not only makes the leakage higher, it makes it highly
variable - a nominal 80mV/decade means that if your VT
of 200mV (low-VT) has a +/-100mV tolerance the real
leakage current could vary upward by over a decade at
Vgs=0 (or downward, but nobody cries about that).
And even at nominal, 2.5 decades (for 200mV/80mV)
means you'd leak about 3nA per transistor (where a
good long channel high VT FET should be femtoamp
range). Now figure your LVT transistor count.
 

Why leakage current in low Vt cells is high as compare to high Vt cells ?

Simply put, because low Vt cells are designed for performance. The trade-off is that the threshold is so low/narrow, that it leaks more.
 
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