+ Post New Thread
Results 1 to 3 of 3
  1. #1
    Full Member level 2
    Points: 1,684, Level: 9

    Join Date
    Oct 2013
    Posts
    138
    Helped
    4 / 4
    Points
    1,684
    Level
    9

    Design of LNA using CMOS transistor

    I want to design LNA using CMOS transistor, and am familiar with designing LNA using HEMT transistor. I have used Avago technologies ATF54143 s2p parameters to design and have simulated and fabricated.

    Similarly which CMOS transistor will give less NF and more gain, which company CMOS transistor, I need to select and how to get s2p parameters for that company. Please guide me.

    •   AltAdvertisement

        
       

  2. #2
    Advanced Member level 5
    Points: 30,905, Level: 42
    BigBoss's Avatar
    Join Date
    Nov 2001
    Location
    Turkey
    Posts
    4,538
    Helped
    1365 / 1365
    Points
    30,905
    Level
    42

    Re: Design of LNA using CMOS transistor

    There is no such CMOS Transistor for LNAs.There were some discrete pHEMTs, BJTs once upon a time but all have gone..
    Some Infineon BJTs and some other pHEMTs are still there but very limited.



    •   AltAdvertisement

        
       

  3. #3
    Advanced Member level 5
    Points: 40,467, Level: 49

    Join Date
    Mar 2008
    Location
    USA
    Posts
    6,528
    Helped
    1915 / 1915
    Points
    40,467
    Level
    49

    Re: Design of LNA using CMOS transistor

    In fact there is no "CMOS transistor" - there are NMOS and PMOS.
    As a rule "RF guys" appear to prefer the zero-VT device for gm
    and IDsat, relative to capacitances.

    You can find canned NMOSFETs for lower frequency applications.
    Anything over maybe 1GHz probably wants integrated transistors.
    Kind of wasteful for a 1-transistor LNA (study project?).

    The MOSFET is never the best "low noise" play. It's more about
    the convenience of integration. MESFETs are an option. Probably
    can find single GaAs FETs still, from Qorvo et al (whoever the old
    TriQuint is, today). For integration on silicon, might look to SiGe
    BJTs as well as very short channel MOS (BV vs fmax trades may
    disappoint, but LNAs usually don't have really high input power
    to worry about except as a protection problem). Nowhere do you
    mention Pin, frequency band or desired supply voltage, so there
    is not a lot anyone can do to recommend specifics.

    Discretes vendors ought to provide SPICE and/or S-parameters
    as applications support, find the device first and follow the thread.



--[[ ]]--